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VSP008N10MSC

Vanguard Semiconductor
Part Number VSP008N10MSC
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Apr 12, 2021
Detailed Description Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Tech...
Datasheet PDF File VSP008N10MSC PDF File

VSP008N10MSC
VSP008N10MSC

Overview
Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.
5 V  VitoMOS® Ⅱ Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VSP008N10MSC 100V/85A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.
5 V ID 100 V 6 mΩ 7.
5 mΩ 85 A PDFN5x6 Part ID VSP008N10MSC Package Type PDFN5x6 Marking 008N10MC Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=10V EAS Avalanche energy, single pulsed ② PD PDSM Maximum power dissipation Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient TC =25°C TC =25°C TC =100°C TC =25°C TA=25°C TA=70°C TC =25°C TA=25°C Rating 100 ±20 85 85 53 340 21 16.
5 104 69 4 -55 to 150 Typical 1.
8 30 Unit V V A A A A A A mJ W W °C Unit °C/W °C/W Copyright Vanguard Semiconductor Co.
, Ltd Rev C – OCT, 2019 www.
vgsemi.
com Electrical Characteristics Symbol Parameter VSP008N10MSC 100V/85A N-Channel Advanced Power MOSFET Condition Min.
Typ.
Max.
Unit Static Electrical Characteristics @ Tj=25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 -- -- V Zero Gate Voltage Drain Current VDS=100V,VGS=0V -- -- 1 μA IDSS Zero Gate Voltage Drain Current( Tj =125℃) VDS=100V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) RDS(ON) RDS(ON) Gate Threshold Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance VDS=VGS,ID=250μA 1.
5 1.
9 2.
4 V VGS=10V, ID=20A -- 6 8 mΩ VGS=4.
5V, ID=15A -- 7.
5 ...


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