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VS6411AS

Vanguard Semiconductor
Part Number VS6411AS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Apr 12, 2021
Detailed Description Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Technology  Fast Switching and High effi...
Datasheet PDF File VS6411AS PDF File

VS6411AS
VS6411AS

Overview
Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.
5 V  VitoMOS® Technology  Fast Switching and High efficiency  Pb-free lead plating; RoHS compliant  MSL:Level 1 compliant VS6411AS 60V/11A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.
5 V ID 60 V 12 mΩ 14 mΩ 11 A SOP8 Part ID VS6411AS Package Type SOP8 Marking 6411AS Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS IS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① EAS Avalanche energy, single pulsed ② PD Maximum power dissipation TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C RθJL Rθ JA Thermal Resistance, Junction-to-Lead Thermal Resistance, Junction-to-Ambient Rating 60 ±20 2.
6 11 7 44 91 3.
1 -55 to 150 Typical 24 40 Unit V V A A A A mJ W °C Unit °C/W °C/W Copyright© Vanguard Semiconductor Co.
, Ltd Rev B – JUL, 2019 www.
vgsemi.
com Electrical Characteristics VS6411AS 60V/11A N-Channel Advanced Power MOSFET Symbol Parameter Condition Min.
Typ.
Max.
Unit Static Electrical Characteristics @ Tj=25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 60 -- -- V Zero Gate Voltage Drain Current VDS=60V,VGS=0V -- -- 1 uA IDSS Zero Gate Voltage Drain Current( Tj =125℃) VDS=60V,VGS=0V -- -- 100 uA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) RDS(ON) Gate Threshold Voltage Drain-Source On-State Resistance ③ RDS(ON) Drain-Source On-State Resistance ③ VDS=VGS,ID=250μA 1.
4 1.
8 2.
3 V VGS=10V, ID=10A -- 12 17 mΩ Tj =100℃ -- 18 -- mΩ VGS=4.
5V, ID=6A -- 14 20 mΩ Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Ciss Input Capacitance C oss ...


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