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HM9926B

H&M Semiconductor
Part Number HM9926B
Manufacturer H&M Semiconductor
Description Dual N-Channel Enhancement Mode Power MOSFET
Published Apr 12, 2021
Detailed Description HM9926B Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM9926B uses advanced trench technology and design...
Datasheet PDF File HM9926B PDF File

HM9926B
HM9926B

Overview
HM9926B Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM9926B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
GENERAL FEATURES ● VDS =20V,ID =5A RDS(ON) < 50mΩ @ VGS=4.
5V RDS(ON) < 63mΩ @ VGS=2.
5V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply HM9926B Marking and pin Assignment SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package HM9926B HM9926B S...


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