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BAS3010A-03W

Infineon
Part Number BAS3010A-03W
Manufacturer Infineon
Description Medium Power AF Schottky Diode
Published Apr 15, 2021
Detailed Description Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.41V @ I...
Datasheet PDF File BAS3010A-03W PDF File

BAS3010A-03W
BAS3010A-03W

Overview
Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage (typ.
0.
41V @ IF = 1A) • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BAS3010A.
.
.
BAS 3010A-03W  Type BAS3010A-03W Package SOD323 Configuration single Marking 4/ blue Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage2) Forward current2) VR 30 V IF 1 A Average rectified forward current (50/60Hz, sinus) IFAV 1 Repetitive peak forward current (tp ≤ 1 ms, D ≤ 0.
5) I FRM 3.
5 Non-repetitive peak surge forward current I FSM 10 (t ≤ 10ms) Junction temperature Tj 150 °C www.
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ctoemmperature range Top -65 .
.
.
125 Storage temperature Tstg -65 .
.
.
150 1Pb-containing package may be available upon special request 2For TA > 25°C the derating of VR and IF has to be considered.
Please refer to the attached curves.
1 2007-04-10 BAS3010A.
.
.
Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value Unit ≤ 82 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min.
typ.
max.
DC Characteristics Reverse current2) IR VR = 5 V - 5 25 VR = 10 V - 10 50 VR = 30 V - 40 200 Forward voltage2) VF IF = 1 mA - 170 220 IF = 10 mA - 220 270 IF = 100 mA - 290 340 IF = 500 mA - 350 410 IF = 1 A - 410 470 Unit µA mV AC Characteristics Diode capacitance VR = 5 V, f = 1 MHz CT - 1For calculation of RthJA please refer to Application Note Thermal Resistance 2Pulsed test: tp = 300 µs; D = 0.
01 28 35 pF www.
DataSheet4U.
com 2 2007-04-10 BAS3010A.
.
.
CT Diode capacitance CT = ƒ (VR) f = 1MHz 120 pF 80 60 40 20 Reverse current IR = ƒ (TA) VR = Parameter 10 -2 A 10 -3 10 -4 30 V 20 V 10 V 5V IR 10 -5 10 -6 0 0 5 10 15 20 V 30 VR 10 -7 0 25 50 75 100 °C 1...


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