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BAS3005B-02V

Infineon
Part Number BAS3005B-02V
Manufacturer Infineon
Description Medium Power AF Schottky Diode
Published Apr 15, 2021
Detailed Description Medium Power AF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Low capacitance, low reverse current •...
Datasheet PDF File BAS3005B-02V PDF File

BAS3005B-02V
BAS3005B-02V

Overview
Medium Power AF Schottky Diode • Forward current: 0.
5 A • Reverse voltage: 30 V • Low capacitance, low reverse current • For high efficiency DC/DC conversion, fast switching, protecting and clamping applications • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BAS3005B-02LRH* BAS3005B-02V  BAS3005B.
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Type BAS3005B-02LRH* BAS3005B-02V *Preliminary Package TSLP-2-17 SC79 Configuration single, leadless single Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Diode reverse voltage1) VR RMS reverse voltage Forward current1) VR(RMS) IF Average rectified forward current (50/60Hz, sinus) IFAV Repetitive peak forward current (tp ≤ 1 ms, D ≤ 0.
25) IFRM Non-repetitive peak surge forward current (t ≤ 10ms) IFSM Junction temperature Tj Operating temperature range Top Storage temperature Tstg 1 Marking 5B 3 Value Unit 30 V - 500 mA 500 3.
5 A 5 150 -55 .
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125 -65 .
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150 °C 2012-07-02 BAS3005B.
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1For TA > 25°C the derating of VR and IF has to be considered.
Please refer to the attached curves.
Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance Value ≤ 80 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
DC Characteristics Reverse current1) IR µA VR = 5 V - 1 5 VR = 10 V - 2 10 VR = 30 V - 5 25 Forward voltage1) VF mV IF = 1 mA - 200 250 IF = 10 mA - 260 310 IF = 100 mA - 360 410 IF = 200 mA - 410 470 IF = 500 mA - 550 620 AC Characteristics Diode capacitance VR = 5 V, f = 1 MHz 1Pulsed test: tp = 300 µs; D = 0.
01 CT - 6 10 pF 2 2012-07-02 BAS3005B.
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Diode capacitance CT = ƒ (VR) f = 1MHz 25 pF Reverse current IR = ƒ (TA) VR = Parameter 10 -2 A 10 -3 IR CT 15 10 -4 30 V 20 V 10 V 10 10 -5 5V 5 10 -6 0 0 5 10 15 20 V 30 VR 10 -7 0 25 50 75 100 °C 150 TA...


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