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BAS3005A-02V

Infineon
Part Number BAS3005A-02V
Manufacturer Infineon
Description Low VF Schottky Diode
Published Apr 15, 2021
Detailed Description Low VF Schottky Diode • Forward current: 0.5 A • Reverse voltage: 30 V • Very low forward voltage (typ. 0.45 V @ IF = 0....
Datasheet PDF File BAS3005A-02V PDF File

BAS3005A-02V
BAS3005A-02V

Overview
Low VF Schottky Diode • Forward current: 0.
5 A • Reverse voltage: 30 V • Very low forward voltage (typ.
0.
45 V @ IF = 0.
5 A) • For low loss, fast-recovery protecting and clamping applications • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BAS3005A.
.
.
BAS3005A-02V  Type BAS3005A-02V Package SC79 Configuration single Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Diode reverse voltage1) VR Forward current1), TS ≤ 126 °C, BAS3005A-02V IF Average rectified forward current (50/60Hz, sinus) IFAV Repetitive peak forward current (tp ≤ 1 ms, D ≤ 0.
25), BAS3005A-02V I FRM Non-repetitive peak surge forward current (t ≤ 10 ms), BAS3005A-02V I FSM Junction temperature Tj Operating temperature range Top Storage temperature Tstg 1For TA > 25 °C the derating of VR and IF has to be considered.
Marking 2 Value Unit 30 V 500 mA 500 3.
5 A 5 150 °C -55 .
.
.
125 -65 .
.
.
150 1 2008-02-11 BAS3005A.
.
.
Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value Unit ≤ 80 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min.
typ.
max.
DC Characteristics Reverse current2) IR VR = 5 V - - 15 VR = 10 V - - 30 VR = 30 V - - 300 Forward voltage2) VF IF = 1 mA - 200 260 IF = 10 mA - 260 310 IF = 100 mA - 340 390 IF = 200 mA - 370 420 IF = 500 mA - 450 500 Unit µA mV Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min.
typ.
max.
AC Characteristics Diode capacitance CT - 10 15 VR = 5 V, f = 1 MHz 1For calculation of RthJA please refer to Application Note Thermal Resistance 2Pulsed test: tp = 300 µs; D = 0.
01 Unit pF 2 2008-02-11 BAS3005A.
.
.
Diode capacitance CT = ƒ (VR) f = 1MHz 35 pF CT 25 20 15 10 5 0 0 5 10 15 20 V 30 VR Reverse current IR = ƒ (TA) VR = Parameter 10 -2 A 10 -3 IR 10 -4 10 -5 30 V 20 V 10 V 5V 10 -6 0 25 50 75 100...


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