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BFG325W-XR

NXP
Part Number BFG325W-XR
Manufacturer NXP
Description NPN 14 GHz wideband transistor
Published Apr 20, 2021
Detailed Description CMPAK-4 BFG325W/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1...
Datasheet PDF File BFG325W-XR PDF File

BFG325W-XR
BFG325W-XR

Overview
CMPAK-4 BFG325W/XR NPN 14 GHz wideband transistor Rev.
2 — 15 September 2011 Product data sheet 1.
Product profile 1.
1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.
1.
2 Features and benefits  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability 1.
3 Applications  Intended for Radio Frequency (RF) front end applications in the GHz range, such as:  analog and digital cellular telephones  cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.
)  radar detectors  pagers  Satellite Antenna TeleVision (SATV) tuners 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VCBO VCEO IC Ptot hFE CCBS collector-base voltage open emitter collector-emitter voltage open base collector current (DC) total power dissipation DC current gain collector-base capacitance Tsp  90 C IC = 15 mA; VCE = 3 V; Tj = 25 C VCB = 5 V; f = 1 MHz; emitter grounded fT transition frequency IC = 15 mA; VCE = 3 V; f = 1 GHz; Tamb = 25 C Min Typ Max Unit - - 15 V - - 6 V - - 35 mA [1] - - 210 mW 60 100 200 - 0.
27 0.
4 pF - 14 - GHz NXP Semiconductors BFG325W/XR NPN 14 GHz wideband transistor Table 1.
Quick reference data …continued Symbol Parameter Conditions Gmax s212 NF maximum power gain[2] insertion power gain noise figure IC = 15 mA; VCE = 3 V; f = 1.
8 GHz; Tamb = 25 C IC = 15 mA; VCE = 3 V; f = 1.
8 GHz; Tamb = 25 C; ZS = ZL = 50  s = opt; IC = 3 mA; VCE = 3 V; f = 2 GHz Min Typ Max Unit - 18.
3 - dB - 14 - dB - 1.
1 - dB [1] Tsp is the temperature at the soldering point of the collector pin.
[2] Gmax is the maximum power gain, if K > 1.
If K < 1 then Gmax = MSG, see Figure 4.
2.
Pinning information Table 2.
Pin 1 2 3 4 Pinning Description collector emitter base emitter Simplified outline Sym...


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