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AW3112

AWINIC
Part Number AW3112
Manufacturer AWINIC
Description PNP NMOSFET
Published Apr 22, 2021
Detailed Description AW3112 Feb 2019 V1.2 30V/3A PNP Low VCESAT BJT, Integrated with 20V Trench NMOSFET FEATURES GENERAL DESCRIPTION l  ...
Datasheet PDF File AW3112 PDF File

AW3112
AW3112

Overview
AW3112 Feb 2019 V1.
2 30V/3A PNP Low VCESAT BJT, Integrated with 20V Trench NMOSFET FEATURES GENERAL DESCRIPTION l  Low collector-emitter saturation voltage  Large current capability  High current gain  DFN2mm×2mm-6L Package tia The AW3112 is 30V PNP power bipolar transistor using epitaxial planar technology, integrating with a 20V trench NMOSFET as a switch transistor of base.
 RoHS compliant n The AW3112 has low VCESAT and high current gain.
It is suitable for linear regulator in battery charging APPLICATIONS Battery Charging Portable Device Power Management application.
e AW3112 is available in DFN2mm×2mm×0.
75mm- 6L package.
It is specified among the industrial fid temperatur...


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