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2N2222

ON Semiconductor

NPN Amplifier Transistor

P2N2222A Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS (TA = 25°C unless othe...


ON Semiconductor

2N2222

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P2N2222A Amplifier Transistors NPN Silicon Features These are Pb−Free Devices* MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector −Emitter Voltage VCEO 40 Collector −Base Voltage VCBO 75 Emitter−Base Voltage VEBO 6.0 Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C IC 600 PD 625 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to °C +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com COLLECTOR 1 2 BASE 3 EMITTER TO−92 CASE 29 STYLE 17 123 STRAIGHT LEAD BULK PACK 1 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM P2N2 222A AYWW G G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 1 January, 2013 − Rev. 7 A = Assembly Location Y = Year WW = Work Week G =...




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