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2N2222

ON Semiconductor
Part Number 2N2222
Manufacturer ON Semiconductor
Description NPN Amplifier Transistor
Published Apr 25, 2021
Detailed Description P2N2222A Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS (TA = 25°C unless othe...
Datasheet PDF File 2N2222 PDF File

2N2222
2N2222

Overview
P2N2222A Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector −Emitter Voltage VCEO 40 Collector −Base Voltage VCBO 75 Emitter−Base Voltage VEBO 6.
0 Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C IC 600 PD 625 5.
0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.
5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to °C +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.
3 °C/W Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect ...


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