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FCPF380N60

ON Semiconductor
Part Number FCPF380N60
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Apr 25, 2021
Detailed Description MOSFET – N-Channel, SUPERFET) II 600 V, 10.2 A, 380 mW FCPF380N60-F154 Description SUPERFET II MOSFET is ON Semiconducto...
Datasheet PDF File FCPF380N60 PDF File

FCPF380N60
FCPF380N60

Overview
MOSFET – N-Channel, SUPERFET) II 600 V, 10.
2 A, 380 mW FCPF380N60-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance.
This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SUPERFET II FAST MOSFET series helps minimize various power systems and improve system efficiency.
Features • 650 V @ TJ = 150°C • Typ.
RDS(on) = 330 mW • Ultra Low Gate Charge (Typ.
Qg = 30 nC) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 95 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Computing / Display Power Supplies • Telecom / Server Power Supplies • Industrial Power Supplies • Lighting / Charger / Adapter www.
onsemi.
com VDSS 600 V RDS(ON) MAX 380 mW @ 10 V ID MAX 10.
2 A D G S MOSFET GDS TO−220F Ultra Narrow Lead CASE 221BN MARKING DIAGRAM $Y&Z&3&K FCPF 380N60 © Semiconductor Components Industries, LLC, 2020 December, 2020 − Rev.
0 $Y &Z &3 &K FCPF380N60 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
1 Publication Order Number: FCPF380N60−F154/D FCPF380N60−F154 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter Value Unit VDSS VGSS Drain to Source Voltage Gate to Source Voltage − DC − AC (f > 1 Hz) 600 V ±20 V ±30 ID IDM EAS IAS EAR dv/dt Drain Current Drain Current Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) − Continuous (TC = 25°C) − Continuous (TC = 100°C) − Pulsed (Note 1) 10.
2* 6.
4* 30.
6* 211.
6 2.
3 1.
06 20 A A mJ A mJ V/ns MOSFET dv/dt ...


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