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NTC040N120SC1

Part Number	NTC040N120SC1
Manufacturer	ON Semiconductor
Description	N-Channel MOSFET
Published	Apr 30, 2021
Detailed Description	MOSFET – N‐Channel, Silicon Carbide 1200 V, 40 mW NTC040N120SC1 Description Silicon Carbide (SiC) MOSFET uses a complete...
Datasheet	NTC040N120SC1 PDF File

Overview

MOSFET – N‐Channel, Silicon Carbide 1200 V, 40 mW NTC040N120SC1 Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon.
In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features • 1200 V @ TJ = 175°C • Typ RDS(on) = 40 mW at VGS = 20 V, ID = 40 A • High Speed Switching with Low Capacitance • 100% UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Industrial Motor Drive...

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NTC040N120SC1 N-Channel MOSFET - ON Semiconductor

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