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DMN90H8D5HCTI

INCHANGE
Part Number DMN90H8D5HCTI
Manufacturer INCHANGE
Description N-Channel MOSFET
Published May 10, 2021
Detailed Description isc N-Channel MOSFET Transistor DMN90H8D5HCTI FEATURES ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=...
Datasheet PDF File DMN90H8D5HCTI PDF File

DMN90H8D5HCTI
DMN90H8D5HCTI

Overview
isc N-Channel MOSFET Transistor DMN90H8D5HCTI FEATURES ·Drain Current –ID= 2.
5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.
0Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2.
5 A IDM Drain Current-Single Pluse 3 A PD Total Dissipation @TC=25℃ 30 W TJ Max.
Operating Junction Temperature -55~150 ...


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