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DMNH3010LK3

INCHANGE
Part Number DMNH3010LK3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published May 11, 2021
Detailed Description isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 55A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Stati...
Datasheet PDF File DMNH3010LK3 PDF File

DMNH3010LK3
DMNH3010LK3

Overview
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 55A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.
5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 30 V ±20 V ID Drain Current-Continuous 55 A IDM Drain Current-Single Pluse 100 A PD Total Dissipation @TC=25℃ 60 W TJ Max.
Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.
5 ℃/W DMNH3010LK3 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise ...


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