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DMTH10H010SCT

INCHANGE
Part Number DMTH10H010SCT
Manufacturer INCHANGE
Description N-Channel MOSFET
Published May 12, 2021
Detailed Description isc N-Channel MOSFET Transistor DMTH10H010SCT FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS=...
Datasheet PDF File DMTH10H010SCT PDF File

DMTH10H010SCT
DMTH10H010SCT

Overview
isc N-Channel MOSFET Transistor DMTH10H010SCT FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.
5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 100 V ±20 V ID Drain Current-Continuous 100 A IDM Drain Current-Single Pluse 400 A PD Total Dissipation @TC=25℃ 187 W TJ Max.
Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.
8 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless oth...


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