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DMTH6004SCTB

INCHANGE
Part Number DMTH6004SCTB
Manufacturer INCHANGE
Description N-Channel MOSFET
Published May 15, 2021
Detailed Description isc N-Channel MOSFET Transistor DMTH6004SCTB FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= ...
Datasheet PDF File DMTH6004SCTB PDF File

DMTH6004SCTB
DMTH6004SCTB

Overview
isc N-Channel MOSFET Transistor DMTH6004SCTB FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.
4mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 100 A IDM Drain Current-Single Pluse 200 A PD Total Dissipation @TC=25℃ 136 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.
1 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless othe...


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