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MM20G3T135B

MacMic
Part Number MM20G3T135B
Manufacturer MacMic
Description IGBT
Published Jun 8, 2021
Detailed Description April 2020 Version 02 MM20G3T135B 1350V 20A IGBT RoHS Compliant PRODUCT FEATURES □ 1350V IGBT chip in trench FS-techn...
Datasheet PDF File MM20G3T135B PDF File

MM20G3T135B
MM20G3T135B

Overview
April 2020 Version 02 MM20G3T135B 1350V 20A IGBT RoHS Compliant PRODUCT FEATURES □ 1350V IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery APPLICATIONS □ Induction Heating □ Soft Switching Application □ Inverter 1 2 3 1.
Gate 2.
Collector 3.
Emitter Type VCES IC MM20G3T135B 1350V 20A VCE(sat) TJ=25°C 1.
65V TJmax 175°C Marking MM20G3T135B Package TO-247 ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃ TC=100℃ ICpuls Pulsed collector current,tp limited by TJmax Ptot Power Dissipation Per IGBT VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current TC=100℃ TJmax Max.
Junction Temperature TJop Operating Temperature Tstg Storage Temperature Torque to heatsink Recommended（M3） Weight Values Unit 1350 V ±20 40 20 A 60 268 W 1350 V 20 A 175 -40~175 ℃ -55~150 1.
1 Nm 8 g MacMic Science & Technology Co.
, Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P.
R .
of China 1 Tel.
：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.
macmicst.
com MM20G3T135B IGBT ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=0.
8mA VCE(sat) Collector Emitter Saturation Voltage IC=20A, VGE=15V, TJ=25℃ IC=20A, VGE=15V, TJ=125℃ IC=20A, VGE=15V, TJ=150℃ ICES Collector Leakage Current VCE=1350V, VGE=0V, TJ=25℃ IGES Gate Leakage Current VCE=0V,VGE=±20V, TJ=25℃ Qg Gate Charge VCE=600V, IC=20A , VGE=15V Cies Input Capacitance Cres Reverse Transfer Capacitance VCE=25V, VGE=0V, f =1MHz TJ=25℃ td(on) Turn on Delay Time tr Rise Time VCC=600V,IC=20A RG =20Ω, VGE=±15V, Inductive...


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