DatasheetsPDF.com

MMF200ZB040DK1C

MacMic
Part Number MMF200ZB040DK1C
Manufacturer MacMic
Description DUTO FRED
Published Jun 14, 2021
Detailed Description January 2013 PRELIMINARY MMF200ZB040DK1C 400V 200A DUTO FRED Module RoHS Compliant PRODUCT FEATURES Ultrafast Recove...
Datasheet PDF File MMF200ZB040DK1C PDF File

MMF200ZB040DK1C
MMF200ZB040DK1C

Overview
January 2013 PRELIMINARY MMF200ZB040DK1C 400V 200A DUTO FRED Module RoHS Compliant PRODUCT FEATURES Ultrafast Recovery Time Low Recovery Loss Low Forward Voltage Low Leakage Current Low Inductance Package APPLICATIONS Inversion Welder Uninterruptible Power Supply Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper PFC ABSOLUTE MAXIMUM RATINGS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Values VR VRRM Maximum D.
C.
Reverse Voltage Maximum Repetitive Reverse Voltage 400 IF(AV) Average Forward Current TC=100°C, Per Diode TC=100°C, Per Moudle 100 200 IF(RMS) RMS Forward Current TC=100°C, Per Diode 140 IFSM Non-Repetitive Surge Forward Current 1/2 Cycle, 50Hz, Sine 1/2 Cycle, 60Hz, Sine 1000 1100 I2t For Fusing TJ=45°C, t=10ms, 50Hz, Sine TJ=45°C, t=10ms, 60Hz, Sine 5000 5000 PD TJ TSTG Power Dissipation Junction Temperature Storage Temperature Range 560 -40 to +150 -40 to +125 Torque Module-to-Sink Recommended（M6） 3～4.
7 Torque Module Electrodes Recommended（M6） 3～4.
7 RθJC Junction-to-Case Thermal Resistance 0.
22 Weight 70 Unit V A A2S W °C °C N.
m N.
m °C /W g MacMic Science & Technology Co.
, Ltd.
Version:1 Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jia ngsu Province, P.
R .
of China Tel.
：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.
macmicst.
com 1 MMF200ZB040DK1C ELECTRICAL CHARACTERISTICS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Min.
Typ.
Max.
Unit IRM Maximum Reverse Leakage Current VR = 400V VR = 400V, TJ = 125°C 0.
5 mA 1 VF Forward Voltage IF=100A IF=100A,TJ=125°C trr Reverse Recovery Time (IF = 1A, diF/dt = -200A/μs, VR = 30V) 1.
1 1.
3 V 1.
0 36 ns trr Reverse Recovery Time IF =100A,VR =200V, 75 ns IRRM Maximum Reverse Recovery Current diF/dt = -200A/μs 8.
5 A trr Reverse Recovery Time IF = 100A,VR = 200V, 125 ns IRRM Maximum Reverse Recovery Current diF/dt ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)