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MMG25H120X6TN

MacMic
Part Number MMG25H120X6TN
Manufacturer MacMic
Description IGBT
Published Jun 16, 2021
Detailed Description May 2015 MMG25H120X6TN Version 01 1200V 25A Six-Pack Module RoHS Compliant PRODUCT FEATURES □ IGBT Chip(IGBT3 Trench...
Datasheet PDF File MMG25H120X6TN PDF File

MMG25H120X6TN
MMG25H120X6TN

Overview
May 2015 MMG25H120X6TN Version 01 1200V 25A Six-Pack Module RoHS Compliant PRODUCT FEATURES □ IGBT Chip(IGBT3 Trench+Field Stop technology)，Diode Chip(Emcon3 wheeling diode) □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Industry standard package with insulated copper base plate and soldering pins for PCB mounting □ Temperature sense included APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter and power supplies IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃ TC=80℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current TC=25℃ IFRM Repetitive Peak Forward Current tp=1ms I2t TJ =125℃, t=10ms, VR=0V Values 1200 ±20 40 25 50 147 Unit V A W Values 1200 25 50 170 Unit V A A2S MacMic Science & Technology Co.
, Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P.
R .
of China Tel.
：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.
macmicst.
com 1 MMG25H120X6TN IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=1mA VCE(sat) ICES IGES Collector Emitter Saturation Voltage Collector Leakage Current Gate Leakage Current IC=25A, VGE=15V, TJ=25℃ IC=25A, VGE=15V, TJ=125℃ VCE=1200V, VGE=0V, TJ=25℃ VCE=1200V, VGE=0V, TJ=125℃ VCE=0V,VGE=±15V, TJ=25℃ Rgint Integrated Gate Resistor Qg Gate Charge VCE=600V, IC=25A , VGE=±15V Cies Cres td(on) tr Input Capacitance Reverse Transfer Capacitance Tu...


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