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MMG25H120XB6TC

MacMic
Part Number MMG25H120XB6TC
Manufacturer MacMic
Description PIM
Published Jun 16, 2021
Detailed Description June 2020 MMG25H120XB6TC Preliminary 1200V 25A PIM Module RoHS Compliant PRODUCT FEATURES □ Substrate for Low Therma...
Datasheet PDF File MMG25H120XB6TC PDF File

MMG25H120XB6TC
MMG25H120XB6TC

Overview
June 2020 MMG25H120XB6TC Preliminary 1200V 25A PIM Module RoHS Compliant PRODUCT FEATURES □ Substrate for Low Thermal Resistance □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Solder Contact Technology, Rugged mounting due to integrated Mounting clamps □ Temperature sense included APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter and power supplies Rectifier+Brake+Inverter IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES VGES Collector Emitter Voltage Gate Emitter Voltage TJ=25℃ IC DC Collector Current ICM Repetitive Peak Collector Current TC=25℃, TJmax=175℃ TC=100℃, TJmax=175℃ tp=1ms Ptot Power Dissipation Per IGBT TC=25℃, TJmax=175℃ Values Unit 1200 V ±20 39 25 A 50 157 W Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current tp=1ms I2t TJ =125℃, t=10ms, VR=0V Values Unit 1200 V 25 A 50 110 A2S MacMic Science & Technology Co.
, Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P.
R .
of China 1 Tel.
：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website ：www.
macmicst.
com MMG25H120XB6TC IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=0.
8mA VCE(sat) Collector Emitter Saturation Voltage IC=25A, VGE=15V, TJ=25℃ IC=25A, VGE=15V, TJ=125℃ IC=25A, VGE=15V, TJ=150℃ ICES Collector Leakage Current VCE=1200V, VGE=0V, TJ=25℃ VCE=1200V, VGE=0V, TJ=150℃ IGES Gate Leakage Current VCE=0V,VGE=±20V, TJ=25℃ Rgint Integrated Gate Resistor Qg Gate Charge VCE=600V, IC=25A , VGE=15V Cies Input Capacitance C...


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