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MMG40W120XB6TN

MacMic
Part Number MMG40W120XB6TN
Manufacturer MacMic
Description IGBT
Published Jun 16, 2021
Detailed Description February 2017 PRODUCT FEATURES □ High level of integration □ IGBT3 CHIP(Trench+Field Stop technology) □ Low saturation v...
Datasheet PDF File MMG40W120XB6TN PDF File

MMG40W120XB6TN
MMG40W120XB6TN

Overview
February 2017 PRODUCT FEATURES □ High level of integration □ IGBT3 CHIP(Trench+Field Stop technology) □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Industry standard package with insulated copper base plate and soldering pins for PCB mounting □ Temperature sense included APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter and power supplies MMG40W120XB6TN Version 1 1200V 40A PIM Module RoHS Compliant Rectifier+Brake+Inverter IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES VGES Collector Emitter Voltage Gate Emitter Voltage TJ=25℃ IC DC Collector Current ICM Repetitive Peak Collector Current TC=25℃, TJmax=150℃ TC=80℃, TJmax=150℃ tp=1ms Ptot Power Dissipation Per IGBT TC=25℃, TJmax=150℃ Values Unit 1200 V ±20 55 40 A 80 195 W Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current tp=1ms I2t TJ =125℃, t=10ms, VR=0V Values Unit 1200 V 40 A 80 300 A2S MacMic Science & Technology Co.
, Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P.
R .
of China Tel.
：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.
macmicst.
com 3 MMG40W120XB6TN IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=1.
5mA VCE(sat) Collector Emitter Saturation Voltage IC=40A, VGE=15V, TJ=25℃ IC=40A, VGE=15V, TJ=125℃ ICES Collector Leakage Current VCE=1200V, VGE=0V, TJ=25℃ VCE=1200V, VGE=0V, TJ=125℃ IGES Gate Leakage Current VCE=0V,VGE=±15V, TJ=25℃ Rgint Integrated Gate Resistor Qg Gate Charge VCE=600V, IC=40A , VGE=±15V Cies...


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