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MMG50W120XB6TC

MacMic
Part Number MMG50W120XB6TC
Manufacturer MacMic
Description PIM
Published Jun 16, 2021
Detailed Description July 2020 MMG50W120XB6TC Preliminary 1200V 50A PIM Module RoHS Compliant PRODUCT FEATURES □ High level of integratio...
Datasheet PDF File MMG50W120XB6TC PDF File

MMG50W120XB6TC
MMG50W120XB6TC

Overview
July 2020 MMG50W120XB6TC Preliminary 1200V 50A PIM Module RoHS Compliant PRODUCT FEATURES □ High level of integration □ IGBT CHIP(Trench+Field Stop technology) □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Industry standard package with insulated copper base plate and soldering pins for PCB mounting □ Temperature sense included APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter and power supplies Rectifier+Brake+Inverter IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃, TJmax=175℃ TC=100℃, TJmax=175℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT TC=25℃, TJmax=175℃ Values Unit 1200 V ±20 76 50 A 100 278 W Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current tp=1ms I2t TJ =125℃, t=10ms, VR=0V Values Unit 1200 V 50 A 100 650 A2S MacMic Science & Technology Co.
, Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P.
R .
of China 1 Tel.
：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website ：www.
macmicst.
com MMG50W120XB6TC IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=2mA VCE(sat) Collector - Emitter Saturation Voltage IC=50A, VGE=15V, TJ=25℃ IC=50A, VGE=15V, TJ=125℃ IC=50A, VGE=15V, TJ=150℃ ICES Collector Leakage Current VCE=1200V, VGE=0V, TJ=25℃ VCE=1200V, VGE=0V, TJ=150℃ IGES Gate Leakage Current VCE=0V,VGE=±20V, TJ=25℃ Rgint Integrated Gate Resistor Qg Gate Charge ...


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