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MMG75S120B6UC

MacMic
Part Number MMG75S120B6UC
Manufacturer MacMic
Description IGBT
Published Jun 18, 2021
Detailed Description November 2018 PRODUCT FEATURES □ IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive tempe...
Datasheet PDF File MMG75S120B6UC PDF File

MMG75S120B6UC
MMG75S120B6UC

Overview
November 2018 PRODUCT FEATURES □ IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery MMG75S120B6UC Preliminary 1200V 75A IGBT Module RoHS Compliant APPLICATIONS □ Welding Machine □ Power Supplies □ Others IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES VGES Collector Emitter Voltage Gate Emitter Voltage TJ=25℃ IC DC Collector Current ICM Repetitive Peak Collector Current TC=25℃,TJmax=175℃ TC=90℃,TJmax=175℃ tp=1ms Ptot Power Dissipation Per IGBT TC=25℃,TJmax=175℃ Values Unit 1200 V ±20 110 75 A 150 405 W Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current tp=1ms I2t TJ =125℃, t=10ms, VR=0V Values Unit 1200 V 75 A 150 1150 A2S MacMic Science & Technology Co.
, Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P.
R .
of China 1 Tel.
：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website ：www.
macmicst.
com MMG75S120B6UC IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=3mA VCE(sat) Collector Emitter Saturation Voltage IC=75A, VGE=15V, TJ=25℃ IC=75A, VGE=15V, TJ=125℃ IC=75A, VGE=15V, TJ=150℃ ICES Collector Leakage Current VCE=1200V, VGE=0V, TJ=25℃ VCE=1200V, VGE=0V, TJ=150℃ IGES Gate Leakage Current VCE=0V,VGE=±20V, TJ=25℃ Rgint Integrated Gate Resistor Qg Gate Charge VCE=600V, IC=75A , VGE=15V Cies Input Capacitance Cres Reverse Transfer Capacitance VCE=25V, VGE=0V, f =1MHz TJ=25℃ td(on) Turn on Delay Time tr Rise Time VCC=600V,IC=75A RG =7.
5Ω, VGE=±15V, Induct...


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