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MMG100D170B6EN

MacMic
Part Number MMG100D170B6EN
Manufacturer MacMic
Description IGBT
Published Jun 20, 2021
Detailed Description April 2015 PRODUCT FEATURES □ IGBT3 CHIP(1700V Trench+Field Stop technology) □ Low turn-off losses, short tail current □...
Datasheet PDF File MMG100D170B6EN PDF File

MMG100D170B6EN
MMG100D170B6EN

Overview
April 2015 PRODUCT FEATURES □ IGBT3 CHIP(1700V Trench+Field Stop technology) □ Low turn-off losses, short tail current □ VCE(sat) with positive temperature coefficient □ DIODE CHIP(1700V EMCON 3 technology) □ Free wheeling diodes with fast and soft reverse recovery MMG100D170B6EN 1700V 100A IGBT Module Version 01 RoHS Compliant APPLICATIONS □ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems IGBT-inverter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃ TC=95℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT T C =25°C unless otherwise specified Values Unit 1700 V ±20 150 100 A 200 780 W Diode-inverter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions T C =25°C unless otherwise specified Values Unit VRRM Repetitive Reverse Voltage TJ=25℃ 1700 V IF(AV) IFRM Average Forward Current Repetitive Peak Forward Current TC=25℃ tp=1ms 100 A 200 I2t TJ =125℃, t=10ms, VR=0V 1650 A2S MacMic Science & Technology Co.
, Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jia ngsu Province, P.
R .
of China 1 Tel.
：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.
macmicst.
com MMG100D170B6EN IGBT-inverter ELECTRICAL CHARACTERISTICS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Min.
Typ.
Max.
Unit VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=4mA 5.
2 5.
8 6.
4 VCE(sat) Collector Emitter Saturation Voltage ICES Collector Leakage Current IGES Gate Leakage Current IC=100A, VGE=15V, TJ=25℃ 2 2.
45 V IC=100A, VGE=15V, TJ=125℃ 2.
4 VCE=1700V, VGE=0V, TJ=25℃ 3 mA VCE=1700V, VGE=0V, TJ=125℃ 20 mA VCE=0V,VGE=±15V, TJ=25℃ -400 400 nA Rgint Integrated Gate Resistor 4.
8 Ω Qg Gate Charge VCE=900V, IC=100A , VGE=±15V 1.
2 µC Cies Cres td(on) tr Input Capacitance Reverse Trans...


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