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MMG100J120U6T4N

MacMic
Part Number MMG100J120U6T4N
Manufacturer MacMic
Description IGBT
Published Jun 20, 2021
Detailed Description March 2015 MMG100J120U6T4N Preliminary 1200V 100A IGBT Module RoHS Compliant PRODUCT FEATURES □ IGBT4 Chip(Trench+Fi...
Datasheet PDF File MMG100J120U6T4N PDF File

MMG100J120U6T4N
MMG100J120U6T4N

Overview
March 2015 MMG100J120U6T4N Preliminary 1200V 100A IGBT Module RoHS Compliant PRODUCT FEATURES □ IGBT4 Chip(Trench+Field Stop technology) □ Low switching losses □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Popular SOT-227 Package APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter and power supplies IGBT ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES VGES Collector Emitter Voltage Gate Emitter Voltage TJ=25℃ IC DC Collector Current ICM Repetitive Peak Collector Current TC=25℃,TJmax=175℃ TC=100℃,TJmax=175℃ tp=1ms Ptot Power Dissipation Per IGBT TC=25℃,TJmax=175℃ Values Unit 1200 V ±20 150 100 A 200 555 W Diode ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current tp=1ms I2t TJ =125℃, t=10ms, VR=0V Values Unit 1200 V 100 A 200 1900 A2S MacMic Science & Technology Co.
, Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P.
R .
of China 1 Tel.
：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website ：www.
macmicst.
com MMG100J120U6T4N IGBT ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=3.
8mA VCE(sat) Collector Emitter Saturation Voltage IC=100A, VGE=15V, TJ=25℃ IC=100A, VGE=15V, TJ=125℃ ICES Collector Leakage Current VCE=1200V, VGE=0V, TJ=25℃ VCE=1200V, VGE=0V, TJ=125℃ IGES Gate Leakage Current VCE=0V,VGE=±15V, TJ=25℃ Rgint Integrated Gate Resistor Qg Gate Charge VCE=600V, IC=100A , VGE=±15V Cies Input Capacitance Cres Reverse Transfer Capacitance VCE=25V, VGE=0V, f =1MHz td(on) Turn on Delay Time tr Rise Time VCC=600V,IC=100A...


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