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MMG100S120UK6TN

MacMic
Part Number MMG100S120UK6TN
Manufacturer MacMic
Description IGBT
Published Jun 20, 2021
Detailed Description April 2015 MMG100S120UK6TN 1200V 100A IGBT Module Version 01 RoHS Compliant PRODUCT FEATURES □ IGBT3 CHIP(Trench+Fi...
Datasheet PDF File MMG100S120UK6TN PDF File

MMG100S120UK6TN
MMG100S120UK6TN


Overview
April 2015 MMG100S120UK6TN 1200V 100A IGBT Module Version 01 RoHS Compliant PRODUCT FEATURES □ IGBT3 CHIP(Trench+Field Stop technology) □ High short circuit capability,self limiting short circuit current □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switching losses APPLICATIONS □ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems IGBT ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES IC Gate Emitter Voltage DC Collector Current TC=25℃ TC=80℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT T C =25°C unless otherwise specified Values Unit 1200 V ±20 140 100 A 200 450 W Diode ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions T C =25°C unless otherwise specified Values Unit VRRM Repetitive Reverse Voltage TJ=25℃ 1200 V IF(AV) IFRM Average Forward Current Repetitive Peak Forward Current TC=25℃ tp=1ms 100 A 200 I2t TJ =125℃, t=10ms, VR=0V 1850 A2S MacMic Science & Technology Co.
, Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P.
R .
of China 1 Tel.
：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.
macmicst.
com MMG100S120UK6TN IGBT ELECTRICAL CHARACTERISTICS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Min.
Typ.
Max.
Unit VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=4mA 5.
0 5.
8 6.
5 VCE(sat) Collector Emitter Saturation Voltage ICES IGES Rgint Collector Leakage Current Gate Leakage Current Integrated Gate Resistor IC=100A, VGE=15V, TJ=25℃ 1.
7 2.
15 V IC=100A, VGE=15V, TJ=125℃ 1.
9 VCE=1200V, VGE=0V, TJ=25℃ 1 mA VCE=1200V, VGE=0V, TJ=125℃ 10 mA VCE=0V,VGE=±15V, TJ=25℃ -400 400 nA 7.
5 Ω Qg Gate Charge VCE=600V, IC=100A , VGE=±15V 0.
9 µC Cies Cres td(on) tr Input Capacitanc...


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