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MMG100W120XB6T4N

MacMic
Part Number MMG100W120XB6T4N
Manufacturer MacMic
Description IGBT
Published Jun 20, 2021
Detailed Description February 2015 MMG100W120XB6T4N 1200V 100A PIM Module Version 0 RoHS Compliant PRODUCT FEATURES □ IGBT Chip(IGBT4 Tr...
Datasheet PDF File MMG100W120XB6T4N PDF File

MMG100W120XB6T4N
MMG100W120XB6T4N

Overview
February 2015 MMG100W120XB6T4N 1200V 100A PIM Module Version 0 RoHS Compliant PRODUCT FEATURES □ IGBT Chip(IGBT4 Trench+Field Stop technology)，Diode Chip(Emcon4 wheeling diode) □ High level of integration—only one power semiconductor module required for the whole drive □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Industry standard package with insulated copper base plate and soldering pins for PCB mounting □ Temperature sense included APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter and power supplies Rectifier+Brake+Inverter IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃ TC=95℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current TC=25℃ IFRM Repetitive Peak Forward Current tp=1ms I2t TJ =125℃, t=10ms, VR=0V Values 1200 ±20 150 100 200 515 Unit V A W Values 1200 100 200 1550 Unit V A A2S MacMic Science & Technology Co.
, Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P.
R .
of China Tel.
：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.
macmicst.
com 1 MMG100W120XB6T4N IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=3.
8mA VCE(sat) Collector Emitter Saturation Voltage ICES Collector Leakage Current IGES Gate Leakage Current IC=100A, VGE=15V, TJ=25℃ IC=100A, VGE=15V, TJ=125℃ VCE=1200V, VGE=0V, TJ=25℃ VCE=1200V, VGE=0V, TJ=125℃ VCE=0V,VGE=±15V, TJ=125℃ Rgint I...


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