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CSD23202W10T

Texas Instruments
Part Number CSD23202W10T
Manufacturer Texas Instruments
Description P-Channel Power MOSFET
Published Jun 20, 2021
Detailed Description Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD23202W10 SLPS506 – AUGUST 2...
Datasheet PDF File CSD23202W10T PDF File

CSD23202W10T
CSD23202W10T

Overview
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD23202W10 SLPS506 – AUGUST 2014 CSD23202W10 12-V P-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.
62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.
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Top View D D G S P0097-01 .
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Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.
5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source OnResistance VGS(th) Threshold Voltage TYPICAL VALUE –12 2.
9 0.
28 VGS = –1.
5 V 82 VGS = –1.
8 V 67 VGS = –2.
5 V 54 VGS = –4.
5 V 44 –0.
60 UNIT V nC nC mΩ mΩ mΩ mΩ V Device CSD23202W10 CSD23202W10T Ordering Information(1) Qty Media Package 3000 7-Inch Reel 250 7-Inch Reel 1 × 1-mm Wafer Level Package Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID Continuous Drain Current(1) IDM Pulsed Drain Current(2) Continuous Gate Clamp Current IG Pulsed Gate Clamp Current PD Power Dissipation(1) TJ, Operating Junction and Tstg Storage Temperature Range VALUE –12 –6 –2.
2 –25 –0.
5 –7 1 UNIT V V A A A A W –55 to 150 °C (1) Device operating at a temperature of 105°C (2) Typ RθJA = 195°C/W, Pulse width ≤100 μs, duty cycle ≤1% RDS(on) - On-State Resistance (mΩ) − VGS - Gate-to-Source Voltage (V) 150 135 120 105 90 75 60 45 30 15 0 0 RDS(on) vs VGS TC = 25°C,I D = − 0.
5 A TC = 125°C,I D = −0.
5 A 1 2 3 4 5 6 − VGS - Gate-to- Source Voltage (V) G001 4.
5 4 3.
5 3 2.
5 2 1.
5 1 0.
5 0 0 Gate Charge ID = −0.
5...


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