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CSD23203WT

Texas Instruments
Part Number CSD23203WT
Manufacturer Texas Instruments
Description P-Channel Power MOSFET
Published Jun 20, 2021
Detailed Description Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD23203W SLPS533A – DECEMBER ...
Datasheet PDF File CSD23203WT PDF File

CSD23203WT
CSD23203WT

Overview
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD23203W SLPS533A – DECEMBER 2014 – REVISED AUGUST 2016 CSD23203W –8-V P-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Low RDS(on) • Small Footprint • Low Profile 0.
62-mm Height • Lead Free • RoHS Compliant • Halogen Free • CSP 1-mm × 1.
5-mm Wafer Level Package 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 16.
2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.
5 mm outline with excellent thermal characteristics in an ultra-low profile.
Top View D S G D S S Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.
5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Voltage Threshold TYPICAL VALUE –8 4.
9 0.
6 VGS = –1.
8 V VGS = –2.
5 V VGS = –4.
5 V –0.
8 35 22 16.
2 UNIT V nC nC mΩ mΩ mΩ V DEVICE CSD23203W CSD23203WT Device Information(1) QTY MEDIA PACKAGE 3000 7-Inch Reel 1.
00-mm × 1.
50-mm 250 7-Inch Reel Wafer Level Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID Continuous Drain Current(1) IDM Pulsed Drain Current(2) PD Power Dissipation TJ, Operating Junction, Tstg Storage Temperature VALUE –8 –6 –3 –54 0.
75 UNIT V V A A W –55 to 150 °C (1) Device operating at a temperature of 105ºC.
(2) Typ RθJA = 170°C/W, pulse width ≤ 100 μs, duty cycle ≤ 1%.
RDS(on) - On-State Resistance (m:) -VGS - Gate-to-Source Voltage (V) RDS(on) vs VGS 60 TC = 25°C, I D = -1.
5 A TC = 125°C, I D = -1.
5 A 50 40 30 20 10 0 0 1 2 3 4 5 6 -VGS - Gate-To-Source Voltage (V) D007 5 ID = -1.
5 A VDS = -4 V 4 Gate Charge 3 2 1 0 0 1 2 3 4 5 6 Qg - Gate Charge (nC) D004 1 An IMPORTANT NOTICE at the end of this da...


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