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CSD25211W1015

Texas Instruments
Part Number CSD25211W1015
Manufacturer Texas Instruments
Description P-Channel Power MOSFET
Published Jun 20, 2021
Detailed Description CSD25211W1015 SLPS296A – FEBRUARY 2012 – REVISED JANUARY 2014 CSD25211W1015, P-Channel NexFET™ Power MOSFET 1 Features ...
Datasheet PDF File CSD25211W1015 PDF File

CSD25211W1015
CSD25211W1015

Overview
CSD25211W1015 SLPS296A – FEBRUARY 2012 – REVISED JANUARY 2014 CSD25211W1015, P-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low On Resistance • Ultra-Low Qg and Qgd • Small Footprint 1.
0 mm × 1.
5 mm • Low Profile 0.
62 mm Height • Pb Free • Gate-Source Voltage Clamp • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.
Top View Product Summary TA = 25°C unless otherwise stated VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.
5V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Voltage Threshold TYPICAL VALUE –20 3.
4 0.
2 VGS = –2.
5 V 36 VGS = –4.
5 V 27 –0.
8 UNIT V nC nC mΩ mΩ V Device CSD25211W1015 Ordering Information Package Media Qty 1 × 1.
5 Wafer Level Package 7-inch reel 3000 Ship Tape and Reel Absolute Maximum Ratings TA = 25°C unless otherwise stated VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID Continuous Drain Current, TA = 25°C(1) IDM Pulsed Drain Current, TA = 25°C(2) IG Continuous Drain Current, TA = 25°C Pulsed Drain Current PD Power Dissipation(1) TSTG Storage Temperature Range TJ Operating Junction Temperature Range VALUE -20 -6 -3.
2 -9.
5 -0.
5 -7 1 UNIT V V A A A A W –55 to 150 °C (1) Typical RθJA = 119°C/W on 1 inch2 of 2 oz.
Cu on 0.
06-inch thick FR4 PCB.
(2) Pulse width ≤ 10 µs, duty cycle ≤ 2% RDS(on) - On-State Resistance - mΩ VGS - Gate-to-Source Voltage (V) 100 90 80 70 60 50 40 30 20 10 0 0 RDS(ON) vs VGS ID = 1.
5A TC = 25°C TC = 125ºC 1 2 3 4 5 6 VGS - Gate-to- Source Voltage - V G001 6 5 ID = 1.
5A VDD = 10V 4 Gate Charge 3 2 1 0 0 2 Qg - Gate Charge - nC (nC) 4 G001 3.
1 Electrostatic Discharge Caution These devices have limited built-in ESD protection.
The leads should be...


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