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CSD25202W15T

Texas Instruments
Part Number CSD25202W15T
Manufacturer Texas Instruments
Description P-Channel Power MOSFET
Published Jun 20, 2021
Detailed Description Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD25202W15 SLPS508A – JUNE 20...
Datasheet PDF File CSD25202W15T PDF File

CSD25202W15T
CSD25202W15T

Overview
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD25202W15 SLPS508A – JUNE 2014 – REVISED JULY 2014 CSD25202W15 20-V P-Channel NexFET™ Power MOSFET 1 Features •1 Low-Resistance • Small Footprint 1.
5 mm × 1.
5 mm • Gate ESD Protection –3 kV • Pb Free • RoHS Compliant • Halogen Free • Gate-Source Voltage Clamp 2 Applications • Battery Management • Battery Protection 3 Description This 21 mΩ, 20 V device is designed to deliver the lowest on resistance and gate charge in a small 1.
5 mm × 1.
5 mm chip scale package with excellent thermal characteristics in an ultra-low profile.
Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
Top View Pin A1 Indicator G D S Symbol Source Gate D D S D S S Drain P0117-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.
5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE –20 5.
8 0.
8 VGS = –1.
8 V 40 VGS = –2.
5 V 26 VGS = –4.
5 V 21 –0.
75 UNIT V nC nC mΩ mΩ mΩ V Device CSD25202W15 CSD25202W15T Ordering Information(1) Qty Media Package 3000 7-Inch Reel 250 7-Inch Reel 1.
5-mm × 1.
5-mm Wafer Level Package Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Text Added For Spacing Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current(1) ID Pulsed Drain Current(2) Continuous Gate Current(1) IG Pulsed Gate Current(2) VALUE –20 –6 –4 –38 –0.
5 –7 UNIT V V A A A A PD Power Dissipation TJ, Operating Junction and Tstg Storage Temperature Range 0.
5 W –55 to 150 °C (1) Ball limited (2) Typical RθJA = 220ºC/W, pulse duration ≤100 µs, duty cycle ≤ 1% RDS(on) - On-State Resistance (mΩ) − VGS - Gate-to-Source Voltage (V) 50 46 42 38 34 30 26 22 18 14 10 0 RDS(o...


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