DatasheetsPDF.com

CSD25481F4T

Texas Instruments
Part Number CSD25481F4T
Manufacturer Texas Instruments
Description P-Channel Power MOSFET
Published Jun 20, 2021
Detailed Description Product Folder Order Now Technical Documents Tools & Software Support & Community CSD25481F4 SLPS420E – SEPTEMBER 2...
Datasheet PDF File CSD25481F4T PDF File

CSD25481F4T
CSD25481F4T

Overview
Product Folder Order Now Technical Documents Tools & Software Support & Community CSD25481F4 SLPS420E – SEPTEMBER 2013 – REVISED DECEMBER 2017 CSD25481F4 20 V P-Channel FemtoFET™ MOSFET 1 Features •1 Ultra-Low On Resistance • Ultra-Low Qg and Qgd • High Operating Drain Current • Ultra-Small Footprint (0402 Case Size) – 1 mm × 0.
6 mm • Ultra-Low Profile – 0.
35 mm Max Height • Integrated ESD Protection Diode – Rated >4 kV HBM – Rated >2 kV CDM • Lead and Halogen Free • RoHS Compliant 2 Applications • Optimized for Load Switch Applications • Optimized for General Purpose Switching Applications • Battery Applications • Handheld and Mobile Applications 3 Description This 90 mΩ, 20 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.
This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
.
Typical Part Dimensions 0.
35 mm Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.
5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE –20 913 153 VGS = –1.
8 V 395 VGS = –2.
5 V 145 VGS = –4.
5 V 90 –0.
95 UNIT V pC pC mΩ mΩ mΩ V Device CSD25481F4 CSD25481F4T Ordering Information(1) Qty Media Package 3000 250 7-Inch Reel 7-Inch Reel Femto(0402) 1.
0 mm × 0.
6 mm Land Grid Array (LGA) Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C unless otherwise stated VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID Continuous Drain Current(1) IDM Pulsed Drain Current(2) Continuous Gate Clamp Current IG Pulsed Gate Clamp Current(2) PD Power Dissipation(1) Human Body Model (HBM) V (ESD) Charged Device Model (CDM) VALUE –20 –12 –2.
5 –13.
1 –35 –350 500 4 2 UNIT V V A A mA mW kV kV TJ, Operating Junction and Tstg Storage Temperatur...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)