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CSD25483F4

Texas Instruments
Part Number CSD25483F4
Manufacturer Texas Instruments
Description P-Channel Power MOSFET
Published Jun 20, 2021
Detailed Description Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD25483F4 SLPS449D – OCTOBER ...
Datasheet PDF File CSD25483F4 PDF File

CSD25483F4
CSD25483F4

Overview
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD25483F4 SLPS449D – OCTOBER 2013 – REVISED OCTOBER 2014 CSD25483F4 20 V P-Channel FemtoFET™ MOSFET 1 Features •1 Ultra-Low On-Resistance • Ultra-Low Qg and Qgd • High Operating Drain Current • Ultra-Small Footprint (0402 Case Size) – 1.
0 mm × 0.
6 mm • Ultra-Low Profile – 0.
35 mm Max Height • Integrated ESD Protection Diode – Rated >4 kV HBM – Rated >2 kV CDM • Lead and Halogen Free • RoHS Compliant 2 Applications • Optimized for load Switch Applications • Optimized for General Purpose Switching Applications • Battery Applications • Handheld and Mobile Applications 3 Description This 210 mΩ, 20 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.
This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
.
Typical Part Dimensions 0.
35 mm Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.
5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE –20 959 161 VGS = –1.
8 V 530 VGS = –2.
5 V 338 VGS = –4.
5 V 210 –0.
95 UNIT V pC pC mΩ mΩ mΩ V Device CSD25483F4 CSD25483F4T .
Ordering Information(1) Qty Media Package 3000 250 7-Inch Reel Femto (0402) 1.
0 mm × 0.
6 mm Land Grid Array (LGA) Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID Continuous Drain Current(1) IDM Pulsed Drain Current(2) Continuous Gate Clamp Current IG Pulsed Gate Clamp Current(2) PD Power Dissipation(1) Human Body Model (HBM) V(ESD) Charged Device Model (CDM) VALUE –20 –12 –1.
6 –6.
5 –35 –350 500 4 2 UNIT V V A A mA mW kV kV TJ, Operating Junction and Tstg Storage Temperature Range –55 to 150 °C (1) Ty...


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