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CSD25484F4

Texas Instruments
Part Number CSD25484F4
Manufacturer Texas Instruments
Description P-Channel Power MOSFET
Published Jun 20, 2021
Detailed Description Product Folder Order Now Technical Documents Tools & Software Support & Community CSD25484F4 SLPS551A – MAY 2015 – ...
Datasheet PDF File CSD25484F4 PDF File

CSD25484F4
CSD25484F4

Overview
Product Folder Order Now Technical Documents Tools & Software Support & Community CSD25484F4 SLPS551A – MAY 2015 – REVISED AUGUST 2017 CSD25484F4 –20-V P-Channel FemtoFET™ MOSFET 1 Features •1 Low On-Resistance • Ultra-Low Qg and Qgd • Low-Threshold Voltage • Ultra-Small Footprint (0402 Case Size) – 1.
0 mm × 0.
6 mm • Ultra-Low Profile – 0.
2-mm Height • Integrated ESD Protection Diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and Halogen Free • RoHS Compliant 2 Applications • Optimized for Load Switch Applications • Optimized for General Purpose Switching Applications • Battery Applications • Handheld and Mobile Applications 3 Description This 80-mΩ, –20-V, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.
This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.
5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE –20 1090 150 VGS = –1.
8 V 405 VGS = –2.
5 V 150 VGS = –4.
5 V 93 VGS = –8.
0 V 80 –0.
95 UNIT V pC pC mΩ V DEVICE CSD25484F4 CSD25484F4T Device Information(1) QTY MEDIA PACKAGE 3000 7-Inch Reel 250 Femto (0402) 1.
00-mm × 0.
60-mm Land Grid Array (LGA) SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID Continuous Drain Current(1) IDM Pulsed Drain Current(1)(2) Continuous Gate Clamp Current IG Pulsed Gate Clamp Current(2) PD Power Dissipation(1) Human-Body Model (HBM) V(ESD) Charged-Device Model (CDM) VALUE –20 –12 –2.
5 –22 –35 –350 500 4 2 UNIT V V A A mA mW kV TJ, Operating Junction, Tstg Storage Temperature –55 to 150 °C (1) Typical RθJA = 85°C/W on 1-in2 (6.
45-cm2), 2-oz (0.
071-mm) thi...


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