DatasheetsPDF.com

MMG150D170B6TC

MacMic
Part Number MMG150D170B6TC
Manufacturer MacMic
Description IGBT
Published Jul 3, 2021
Detailed Description September 2018 PRODUCT FEATURES □ IGBT CHIP(1700V Trench+Field Stop technology) □ Low turn-off losses, short tail curren...
Datasheet PDF File MMG150D170B6TC PDF File

MMG150D170B6TC
MMG150D170B6TC

Overview
September 2018 PRODUCT FEATURES □ IGBT CHIP(1700V Trench+Field Stop technology) □ Low turn-off losses, short tail current □ VCE(sat) with positive temperature coefficient □ Ultra Low Loss,High Ruggedness □ Free wheeling diodes with fast and soft reverse recovery MMG150D170B6TC Version 01 1700V 150A IGBT Module RoHS Compliant APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter and power supplies □ Photovoltaic/Fuel cell IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES VGES Collector Emitter Voltage Gate Emitter Voltage TJ=25℃ IC DC Collector Current ICM Repetitive Peak Collector Current TC=25℃,TJmax=175℃ TC=100℃,TJmax=175℃ tp=1ms Ptot Power Dissipation Per IGBT TC=25℃,TJmax=175℃ Values Unit 1700 V ±20 230 150 A 300 1071 W Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current tp=1ms I2t TJ =125℃, t=10ms, VR=0V Values Unit 1700 V 150 A 300 4200 A2S MacMic Science & Technology Co.
, Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P.
R .
of China 1 Tel.
：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website ：www.
macmicst.
com MMG150D170B6TC IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=6mA VCE(sat) Collector Emitter Saturation Voltage IC=150A, VGE=15V, TJ=25℃ IC=150A, VGE=15V, TJ=125℃ IC=150A, VGE=15V, TJ=150℃ ICES Collector Leakage Current VCE=1700V, VGE=0V, TJ=25℃ VCE=1700V, VGE=0V, TJ=150℃ IGES Gate Leakage Current VCE=0V,VGE=±15V, TJ=25℃ Rgint Integrated Gate Resistor Qg Gate Charge VCE=900V, IC=150A , VGE=15V Cies Input Capacitance Cres Reverse Transfer Capacitance VCE=25V, VGE=0V, f =1MHz td(on...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)