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MSG40T120FH

maspower
Part Number MSG40T120FH
Manufacturer maspower
Description High speed Trench Fieldstop IGBT
Published Jul 6, 2021
Detailed Description MSG40T120FH High speed Trench Fieldstop IGBT General Description This IGBT is produced using advanced trench fieldstop ...
Datasheet PDF File MSG40T120FH PDF File

MSG40T120FH
MSG40T120FH

Overview
MSG40T120FH High speed Trench Fieldstop IGBT General Description This IGBT is produced using advanced trench fieldstop IGBT technology, which provides low V CE(sat), high switching performance and excellent quality.
Applications ▄ Welding TO-247 Features ▄ High Speed Switching ▄ Positive Temperature coefficient for easy paralleling ▄ High ruggedness&good thermal stability ▄ Including fast free-wheeling diode ▄ Very tight parameter distribution GC E Absolute Maximum Ratings Characteristics Symbol Collector-emitter voltage V CE Gate-emitter voltage V GE Collector current T C=25℃ T C=100℃ I C Pulsed collector current, t p limited by T jmax I CM Diode forward current @T C=100℃ IF Diode pulsed collector current, t p limited by T jmax I FM Rating 1200 ±20 80 40 120 40 120 Unit V V A A A A Short circuit withstand time V GE=15V, V CC=600V, T j=25°C Allowed number of short circuit < 1000 Time between short circuits ≥ 1.
0s t SC 3 μs Power dissipation Operating junction temperature Storage temperature T C=25℃ T C=100℃ P tot Tj T stg 312 W 125 -55~150 ℃ -55~150 May.
2018 Revision 1.
0 1/8 maspower MSG40T120FH Thermal Characteristics Characteristics Thermal resistance junction-to-case for IGBT Thermal resistance junction-to-case for Diode Thermal resistance junction-to-ambient Symbol Rating Unit R thJC R thJCD R thJA 0.
40 1.
2 40 ℃/W Electrical Characteristics (T j =25℃ unless otherwise specified) Characteristics Symbol Test Condition Min Static Characteristics Collector-emitter breakdown voltage BV CES V GE=0V, I C=0.
5mA 1200 Collector-emitter saturation voltage V CE(sat) Gate-emitter threshold voltage Zero gate voltage collector current V GE(th) I CES V GE=15V, I C=40A T j=25℃ - T j=150℃ - I C=1.
5mA, V CE=V GE 5 V CE=1200V, V GE=0V T j=25℃ - T j=150℃ - Gate-emitter leakage current I GES V CE=0V, V GE=20V - Transconductance g FS V CE=20V, I C=40A - Dynamic Characteristics Input capacitance C iss V CE=25V - Output c...


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