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0405SC-1000M

Part Number	0405SC-1000M
Manufacturer	Microsemi
Description	Silicon Carbide SIT
Published	Jul 28, 2021
Detailed Description	0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICA...
Datasheet	0405SC-1000M PDF File

Overview

0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1000 Watts of RF power from 406 to 450 MHz.
The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Tracking Radar.
The device is an addition to a series of High Power Silicon Carbide Transistors from Microsemi PPG.
CASE OUTLINE 55ST FET (Common Gate) ABSOLUTE MAXIMUM RATINGS Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Temperatures Storage Temperature Operating Junction Temperature 250V -1V -65 to +150°C +250°C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Idss Drain-Source Leakage Current VGS = -20V, VDG= 125V Igss Gate-Source Leakage Current VGS = -20V, VDS = 0V θJC1 Thermal Resistance 750 µA 50 µA 0.
15 ºC/W FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, Idq(ave) = 250 mA, Freq = 406, 425, 450 MHz, GPG Common Gate Power Gain Pout = 1000 W, Pulsed 8 8.
5 dB Pin Input Power Pulse Width = 300us, DF = 10% 140 155 W ηd Drain Efficiency F = 450 MHz, Pout =1000W 50 % ψ Load Mismatch F = 406 MHz, Pout = 1000W 10:1 Po +1dB Power Output – Higher Drive F = 450 MHz, Pin = 180 W 1100 W Vgs Gate source Voltage Set for Idq(ave) = 150mA 3.
0 10.
0 Volts Rev F May 2010 Microsemi PPG Inc.
reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.
microsemi.
.
com or contact our factory direct.
0405SC-1000M Rev F 0405SC-1000M Pout(W) Gain(db) Typical RF Performance Curve 0405SC-1000M: Gain & Pout gain Pout 300us 10% 125V 12 1200 1100 10 1000 900 8 800 700 6 600 500 4 400 300 2 200 100 0 0 10 20 40 82 132 164 181 Pin(W) drain efficiency 60% 55% 50% ...

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0405SC-1000M Silicon Carbide SIT - Microsemi

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