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MMG300D060B6EN

MacMic
Part Number MMG300D060B6EN
Manufacturer MacMic
Description IGBT
Published Jul 31, 2021
Detailed Description April 2015 MMG300D060B6EN 600V 300A IGBT Module Version 01 RoHS Compliant PRODUCT FEATURES □ IGBT3 CHIP(Trench+Fiel...
Datasheet PDF File MMG300D060B6EN PDF File

MMG300D060B6EN
MMG300D060B6EN


Overview
April 2015 MMG300D060B6EN 600V 300A IGBT Module Version 01 RoHS Compliant PRODUCT FEATURES □ IGBT3 CHIP(Trench+Field Stop technology) □ High short circuit capability,self limiting short circuit current □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switching losses APPLICATIONS □ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems IGBT-inverter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃ TC=70℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT T C =25°C unless otherwise specified Values Unit 600 V ±20 400 300 A 600 940 W Diode-inverter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions T C =25°C unless otherwise specified Values Unit VRRM Repetitive Reverse Voltage TJ=25℃ 600 V IF(AV) IFRM Average Forward Current Repetitive Peak Forward Current TC=25℃ tp=1ms 300 A 600 I2t TJ =125℃, t=10ms, VR=0V 8000 A2S MacMic Science & Technology Co.
, Ltd.
Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jia ngsu Province, P.
R .
of China 1 Tel.
:+86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website:www.
macmicst.
com MMG300D060B6EN IGBT-inverter ELECTRICAL CHARACTERISTICS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Min.
Typ.
Max.
Unit VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=4.
8mA 4.
9 5.
8 6.
5 VCE(sat) Collector Emitter Saturation Voltage ICES IGES Rgint Collector Leakage Current Gate Leakage Current Integrated Gate Resistor IC=300A, VGE=15V, TJ=25℃ IC=300A, VGE=15V, TJ=125℃ VCE=600V, VGE=0V, TJ=25℃ VCE=600V, VGE=0V, TJ=125℃ VCE=0V,VGE=±15V, TJ=25℃ 1.
45 1.
6 -400 1 1.
9 V 1 mA 5 mA 400 nA Ω Qg Gate Charge VCE=300V, IC=300A , VGE=±15V 3.
2 µC Cies Cres td(on) tr Inpu...



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