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120M1045

Infineon
Part Number 120M1045
Manufacturer Infineon
Description 1200V SiC Trench MOSFET
Published Aug 14, 2021
Detailed Description IMZ120R045M1 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses...
Datasheet PDF File 120M1045 PDF File

120M1045
120M1045

Overview
IMZ120R045M1 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state characteristic  Wide gate-source voltage range  Benchmark gate threshold voltage, VGS(th) = 4.
5V  0V turn-off gate voltage  Fully controllable dv/dt  Commutation robust body diode, ready for synchronous rectification  Easy to use/drive due to sense (driver) source pin for better control of the gate  Temperature independent turn-off switching losses Gate pin 4 Sense pin 3 Drain pin 1 Source pin 2 Benefits  Efficiency improvement  Enabling higher frequency  Increased power density  Cooling effort reduction  Reduction of system complexity and cost Potential applications  Energy generation o Solar string inverter and solar optimizer  Industrial power supplies o Industrial UPS o Industrial SMPS  Infrastructure – Charge o Charger Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Table 1 Key Performance and Package Parameters Type IMZ120R045M1 VDS 1200V ID (TC = 25°C, Rth(j-c,max)) 52A RDS(on) (Tvj = 25°C, ID = 20A, VGS = 15V) 45mΩ Tj,max 175°C Marking 120M1045 Package PG-TO247-4 Datasheet Please read the Important Notice and Warnings at the end of this document www.
infineon.
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