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MMG600WB065B6EN

MacMic
Part Number MMG600WB065B6EN
Manufacturer MacMic
Description IGBT
Published Aug 21, 2021
Detailed Description March 2017 PRODUCT FEATURES □ IGBT3 CHIP(Trench+Field Stop technology) □ High short circuit capability,self limiting sho...
Datasheet PDF File MMG600WB065B6EN PDF File

MMG600WB065B6EN
MMG600WB065B6EN

Overview
March 2017 PRODUCT FEATURES □ IGBT3 CHIP(Trench+Field Stop technology) □ High short circuit capability,self limiting short circuit current □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Temperature sense included APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter and power supplies □ Photovoltaic/Fuel cell MMG600WB065B6EN Preliminary 650V 600A IGBT Module RoHS Compliant IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES VGES Collector Emitter Voltage Gate Emitter Voltage TJ=25℃ IC DC Collector Current ICM Repetitive Peak Collector Current TC=25℃, TJmax=175℃ TC=60℃, TJmax=175℃ tp=1ms Ptot Power Dissipation Per IGBT TC=25℃, TJmax=175℃ Values Unit 650 V ±20 710 600 A 1200 1760 W Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current tp=1ms I2t TJ =125℃, t=10ms, VR=0V Values 650 600 1200 19.
8 Unit V A KA2S MacMic Science & Technology Co.
, Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P.
R .
of China 1 Tel.
：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website ：www.
macmicst.
com MMG600WB065B6EN IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=9.
6mA VCE(sat) Collector Emitter Saturation Voltage IC=600A, VGE=15V, TJ=25℃ IC=600A, VGE=15V, TJ=125℃ IC=600A, VGE=15V, TJ=150℃ ICES Collector Leakage Current VCE=650V, VGE=0V, TJ=25℃ VCE=650V, VGE=0V, TJ=150℃ IGES Gate Leakage Current VCE=0V,VGE=±15V, TJ=25℃ Rgint Integrated Gate Resistor Qg Gate Charge VCE=300V, IC=600A , VGE=±15V Cies Input Capacitance Cres Reverse ...


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