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IRFSL7434PbF

International Rectifier
Part Number IRFSL7434PbF
Manufacturer International Rectifier
Description Power MOSFET
Published Oct 28, 2021
Detailed Description StrongIRFET™ IRFS7434PbF IRFSL7434PbF Applications l Brushed Motor drive applications l BLDC Motor drive applications l...
Datasheet PDF File IRFSL7434PbF PDF File

IRFSL7434PbF
IRFSL7434PbF


Overview
StrongIRFET™ IRFS7434PbF IRFSL7434PbF Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches l DC/DC and AC/DC converters l DC/AC Inverters G D HEXFET® Power MOSFET D VDSS 40V RDS(on) typ.
1.
25mΩ max.
ID (Silicon Limited) 1.
6mΩ c 320A S ID (Package Limited) 195A D Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free S G D2Pak IRFS7434PbF S D G TO-262 IRFSL7434PbF G Gate D Drain S Source Ordering Information Base part number Package Type IRFSL7434PbF IRFS7434PbF TO-262 D2Pak Standard Pack Form Tube Tube Tape and Reel Left Quantity 50 50 800 Complete Part Number IRFSL7434PbF IRFS7434PbF IRFS7434TRLPbF RDS(on), Drain-to -Source On Resistance (m Ω) ID, Drain Current (A) 5 ID = 100A 4 3 TJ = 125°C 2 1 TJ = 25°C 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1.
Typical On-Resistance vs.
Gate Voltage 1 www.
irf.
com © 2014 International Rectifier 350 300 Limited By Package 250 200 150 100 50 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2.
Maximum Drain Current vs.
Case Temperature Submit Datasheet Feedback November 19, 2014 Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) d Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage Ãfà Peak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Avalanche Characteristics EAS (Therm...



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