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IRHNJC9A3130

International Rectifier
Part Number IRHNJC9A3130
Manufacturer International Rectifier
Description N-CHANNEL POWER MOSFET
Published Oct 28, 2021
Detailed Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) (Ceramic Lid) PD-97911 IRHNJC9A7130 JANSR2N7648U3C 100V, N-CHAN...
Datasheet PDF File IRHNJC9A3130 PDF File

IRHNJC9A3130
IRHNJC9A3130

Overview
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.
5) (Ceramic Lid) PD-97911 IRHNJC9A7130 JANSR2N7648U3C 100V, N-CHANNEL R 9 REF: MIL-PRF-19500/775 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJC9A7130 100 kRads (Si) IRHNJC9A3130 300 kRads (Si) RDS(on) 34m 34m ID QPL Part Number 35A JANSR2N7648U3C 35A JANSF2N7648U3C SMD-0.
5 (Ceramic Lid) Description IR HiRel R9 technology provides superior power MOSFETs for space applications.
These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2).
Their combination of low RDS(on) and faster switching times reduces the power losses and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers.
These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of elect...


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