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C2308

Renesas
Part Number C2308
Manufacturer Renesas
Description Silicon NPN Transistor
Published Dec 3, 2021
Detailed Description 2SC458, 2SC2308 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA1029 and 2SA103...
Datasheet PDF File C2308 PDF File

C2308
C2308

Overview
2SC458, 2SC2308 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA1029 and 2SA1030 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) REJ03G0681-0200 (Previous ADE-208-1043) Rev.
2.
00 Aug.
10.
2005 1.
Emitter 2.
Collector 3.
Base 3 2 1 Absolute Maximum Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SC458 30 30 5 100 –100 200 150 –55 to +150 2SC2308 55 50 5 100 –100 200 150 –55 to +150 (Ta = 25°C) Unit V V V mA mA mW °C °C Rev.
2.
00 Aug 10, 2005 page 1 of 6 2SC458, 2SC2308 Electrical Characteristics Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE*1 VCE(sat) VBE fT Cob NF 2SC458 Min Typ Max 30 — — 30 — — 5 — — — — 0.
5 — — 0.
5 100 — 500 — — 0.
2 — 0.
67 0.
75 — 230 — — 1.
8 3.
5 — 4 10 Small signal input impedance hie — 16.
5 — Small signal voltage feedback ratio hre — 70 — Small signal current transfer ratio hfe — 130 — Small signal output admittance hoe — 11.
0 — Note: 1.
The 2SC458 is grouped by hFE as follows.
B C D 2SC458 100 to 200 160 to 320 250 to 500 2SC2308 Min Typ Max 55 — — (Ta = 25°C) Unit Test conditions V IC = 10 µA, IE = 0 50 — — V IC = 1 mA, RBE = ∞ 5 — — V IE = 10 µA, IC = 0 — — 0.
5 µA VCB =18 V, IE = 0 — — 0.
5 µA VEB = 2 V, IC = 0 160 — 320 VCE = 12 V, IC = 2 mA — — 0.
2 V IC = 10 mA, IB = 1 mA — 0.
67 0.
75 V VCE = 12 V, IC = 2 mA — 230 — MHz VCE = 12 V, IC = 2 mA — 1.
8 3.
5 pF VCB = 10 V, IE = 0, f = 1 MHz — 4 1...


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