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CY621472G30

Cypress Semiconductor
Part Number CY621472G30
Manufacturer Cypress Semiconductor
Description 4-Mbit (256K words x 16 bit) Static RAM
Published Dec 7, 2021
Detailed Description CY62147G/CY621472G CY62147GE MoBL® 4-Mbit (256K words × 16-bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256...
Datasheet PDF File CY621472G30 PDF File

CY621472G30
CY621472G30

Overview
CY62147G/CY621472G CY62147GE MoBL® 4-Mbit (256K words × 16-bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16-bit) Static RAM with Error-Correcting Code (ECC) Features ■ High speed: 45 ns/55 ns ■ Ultra-low standby power ❐ Typical standby current: 3.
5 A ❐ Maximum standby current: 8.
7 A ■ Embedded ECC for single-bit error correction[1, 2] ■ Wide voltage range: 1.
65 V to 2.
2 V, 2.
2 V to 3.
6 V, and 4.
5 V to 5.
5 V ■ 1.
0-V data retention ■ TTL-compatible inputs and outputs ■ Error indication (ERR) pin to indicate 1-bit error detection and correction ■ Pb-free 48-ball VFBGA and 44-pin TSOP II packages Functional Description CY62147G and CY62147GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.
Both devices are offered in single and dual chip enable options and in multiple pin configurations.
The CY62147GE device includes an ERR pin that signals an error-detection and correction event during a read cycle.
Devices with a single chip enable inp...


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