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ISL73033SLHM

Part Number	ISL73033SLHM
Manufacturer	Intersil
Description	Radiation Hardened Driver-GaN Power Stage
Published	Dec 11, 2021
Detailed Description	Datasheet ISL73033SLHM Radiation Hardened Driver-GaN Power Stage with 100V GaN FET The ISL73033SLHM is a radiation har...
Datasheet	ISL73033SLHM PDF File

Overview

Datasheet ISL73033SLHM Radiation Hardened Driver-GaN Power Stage with 100V GaN FET The ISL73033SLHM is a radiation hardened Driver-GaN power stage with a 4.
5V gate driver and a 100V, 7.
5mΩ enhancement-mode Gallium Nitride (GaN) FET in one package.
The device simplifies the PCB layout by integrating a driver plus GaN FET in one package and is designed for isolated topologies and boost type configurations.
The driver operates with a supply voltage from 4.
5V to 13.
2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device.
The ISL73033SLHM has a 4.
5V gate drive voltage (VDRV) generated using an interna...

Similar Datasheet

ISL73033SLHM Radiation Hardened Driver-GaN Power Stage - Intersil

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