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5N3011

Renesas
Part Number 5N3011
Manufacturer Renesas
Description N-Channel MOSFET
Published Dec 12, 2021
Detailed Description H5N3011P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High...
Datasheet PDF File 5N3011 PDF File

5N3011
5N3011

Overview
H5N3011P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G S 1 2 3 Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg REJ03G0385-0200 Rev.
2.
00 Aug.
05.
2004 1.
Gate 2.
Drain (Flange) 3.
Source Ratings 300 ±30 88 176 88 176 30 54 150 0.
833 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C Rev.
2.
00, Aug.
05.
2004, page 1 of 6 H5N3011P Electrical Characteristics Item Symbol Min Drain to Source breakdown voltage V(BR)DSS 300 Zero Gate voltage Drain current IDSS — Gate to Source leak current IGSS — Gate to Source cutoff voltage VGS(off) 3.
0 Forward transfer admittance |yfs| 33 Static Drain to Source on state resistance RDS(on) — Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time td(on) — Rise time tr — Turn-off delay time td(off) — Fall time tf — Total Gate charge Qg — Gate to Source charge Qgs — Gate to Drain charge Qgd — Body-Drain diode forward voltage VDF — Body-Drain diode reverse recovery time trr — Body-Drain diode reverse recovery Qrr — charge Notes: 4.
Pulse test Typ — — — — 56 0.
042 Max — 1 ±0.
1 4.
5 — 0.
048 Unit V µA µA V S Ω (Ta = 25°C) Test conditions ID = 10 mA, VGS = 0 VDS = 300 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 44 A, VDS = 10 V Note4 ID = 44 A, VGS = 10 VNote4 5000 — pF VDS = 25 V 640 — pF VGS = 0 65 — pF f = 1 MHz 60 — ns...


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