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01N30

UTC
Part Number 01N30
Manufacturer UTC
Description N-CHANNEL POWER MOSFET
Published Dec 12, 2021
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 01N30 Preliminary 0.1A, 300V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 01N30 is a ...
Datasheet PDF File 01N30 PDF File

01N30
01N30


Overview
UNISONIC TECHNOLOGIES CO.
, LTD 01N30 Preliminary 0.
1A, 300V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 01N30 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance.
 FEATURES * RDS(ON) ≤ 9.
0Ω @ VGS=10V, ID=0.
05A * High switching speed * 100% avalanche tested  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 01N30L-AE3-R 01N30G-AE3-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23 Pin Assignment 1 2 3 G S D Packing Tape Reel  MARKING 01N30 www.
unisonic.
com.
tw Copyright © 2017 Unisonic Technologies Co.
, Ltd 1 of 4 QW-R205-357.
a 01N30 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 300 V VGSS ±30 V Continuous Drain Current Avalanche Current ID 0.
1 A IAR 0.
1 A Power Dissipation Junction Temperature PD 0.
3 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating: Pulse width limited by maximum junction temperature.
 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse BVDSS IDSS IGSS ID=250µA, VDS=0V VDS=300V VGS=+30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance VGS(TH) RDS(ON) ID=250µA VGS=10V, ID=0.
05A DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VGS=0V, VDS=25V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time Rise Time Turn-OFF...


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