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204S8E

WeEn
Part Number 204S8E
Manufacturer WeEn
Description 3Q Hi-Com Triac
Published Dec 16, 2021
Detailed Description BTA204S-800E 3Q Hi-Com Triac Rev.02 - 28 June 2019 Product data sheet 1. General description Planar passivated high co...
Datasheet PDF File 204S8E PDF File

204S8E
204S8E

Overview
BTA204S-800E 3Q Hi-Com Triac Rev.
02 - 28 June 2019 Product data sheet 1.
General description Planar passivated high commutation three quadrant triac in a TO252 (DPAK) surface-mountable plastic package.
This "series E" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including microcontrollers.
2.
Features and benefits • 3Q technology for improved noise immunity • Direct triggering from low power drivers and logic ICs • High blocking voltage capability • High commutation capability with sensitive gate • Planar passivated for voltage ruggedness and reliability • Sensitive gate for easy logic level triggering • Surface-mountable package • Triggering in three quadrants only 3.
Applications • AC solenoids • General purpose motor control • Home appliances 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig.
1; Fig.
2; Fig.
3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig.
4; Fig.
5 full sine wave; Tj(init) = 25 °C; tp = 16.
7 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 0.
1 A; T2+ G+; Tj = 25 °C; Fig.
7 Min Typ Max Unit - - 800 V - - 4 A - - 25 A - - 27 A - - 125 °C - - 10 mA WeEn Semiconductors BTA204S-800E 3Q Hi-Com Triac Symbol Parameter IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage dIcom/dt rate of change of commutating current Conditions VD = 12 V; IT = 0.
1 A; T2+ G-; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2- G-; Tj = 25 °C; Fig.
7 VD = 12 V; Tj = 25 °C; Fig.
9 IT = 5 A; Tj = 25 °C; Fig.
10 VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A; dVcom/dt = 10 ...


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