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2N6338

Part Number	2N6338
Manufacturer	ON Semiconductor
Description	High-Power NPN Silicon Transistors
Published	Dec 16, 2021
Detailed Description	2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in industrial−military power amplifier and s...
Datasheet	2N6338 PDF File

Overview

2N6338, 2N6341 High-Power NPN Silicon Transistors .
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designed for use in industrial−military power amplifier and switching circuit applications.
• High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341 • High DC Current Gain − hFE = 30 − 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.
0 Vdc (Max) @ IC = 10 Adc • Fast Switching Times @ IC = 10 Adc tr = 0.
3 ms (Max) ts = 1.
0 ms (Max) tf = 0.
25 ms (Max) • Pb−Free Packages are Available ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Peak ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ @ TC = 25_C Derate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage ÎÎÎÎÎÎ...

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