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STPS16H100CG

STMicroelectronics
Part Number STPS16H100CG
Manufacturer STMicroelectronics
Description High voltage power Schottky rectifier
Published Jan 16, 2022
Detailed Description STPS16H100C High voltage power Schottky rectifier Datasheet - production data A1 A2 K K K A2 A1 D2PAK A2 A1 Featu...
Datasheet PDF File STPS16H100CG PDF File

STPS16H100CG
STPS16H100CG

Overview
STPS16H100C High voltage power Schottky rectifier Datasheet - production data A1 A2 K K K A2 A1 D2PAK A2 A1 Features  Negligible switching losses  High junction temperature capability  Low leakage current  Good trade off between leakage current and forward voltage drop  Avalanche capability specified  ECOPACK®2 compliant component for D²PAK on demand Description Dual center tap Schottky rectifier designed for high frequency miniature switch mode power supplies such as adaptors and on-board DC-DC converters.
Table 1: Device summary Symbol Value IF(AV) VRRM Tj (max) VF (typ) 2x 8 A 100 V 175 °C 0.
59 V April 2015 DocID8734 Rev 3 This is information on a product in full production.
1/10 www.
st.
com Characteristics STPS16H100C 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj Repetitive peak reverse voltage Forward rms current Average forward current δ = 0.
5, square wave TC = 165 °C TC = 160 °C Per diode Per device Surge non repetitive forward current tp = 10 ms sinusoidal Repetitive peak avalanche power tp = 10 µs, Tj= 125 °C Storage temperature range Maximum operating junction temperature (1) 100 V 30 A 8 A 16 200 A 625 W -65 to + 175 °C + 175 °C Notes: (1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Symbol Rth(j-c) Rth(c) Table 3: Thermal parameter Parameter Junction to case Per diode Total Coupling Value 1.
6 1.
1 0.
6 Unit °C/W °C/W When the diodes 1 and 2 are used simultaneously : ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 4: Static electrical characteristics (per diode) Symbol Parameter Test conditions Min.
Typ.
Max.
Unit IR(1) VF(2) Reverse leakage current Forward voltage drop Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VR = VRRM IF = 8 A IF = 16 A - 3.
6 µA - ...


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