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X0115MUF

STMicroelectronics
Part Number X0115MUF
Manufacturer STMicroelectronics
Description 1A sensitive gate SCR thyristor
Published Jan 18, 2022
Detailed Description A G K A K G SMBflat-3L Product status link X0115MUF Product summary IT(RMS) 1A VDRM/VRRM 600 V Tj(max.) 125 °C ...
Datasheet PDF File X0115MUF PDF File

X0115MUF
X0115MUF

Overview
A G K A K G SMBflat-3L Product status link X0115MUF Product summary IT(RMS) 1A VDRM/VRRM 600 V Tj(max.
) 125 °C X0115MUF Datasheet 1 A sensitive gate SCR thyristor Features • On-state rms current, 1 A • Narrow sensitive gate current from 30 µA to 150 µA • Repetitive peak off-state voltage, 600 V • Non-repetitive surge peak off-state voltage, 750 V • Compact and ultraflat SMBflat-3L package with creepage distance of 3.
4 mm Applications • Ground-fault circuit interrupter (GFCI, RCB, RCD) • Arc-fault circuit interrupter (AFCI) • Overvoltage crowbar protection in power supplies • Capacitive ignition circuits • Low consumption triggering switches Description Thanks to highly sensitive triggering levels, the 1 A X0115MUF SCR thyristor is suitable for all applications where available gate current is limited.
The X0115MUF offers a high blocking voltage of 600 V, and a surge peak voltage of 750 V, ideal for applications like ground fault circuit interrupter (GFCI) and arc fault circuit interrupters (AFCI).
The surface mount SMBflat-3L package allows modern, compact, SMD based designs for automated manufacturing.
Its 3.
4 mm creepage distance guarantees a 250 V functional isolation (UL 840) at a level 2 pollution degree.
DS13078 - Rev 3 - April 2023 For further information contact your local STMicroelectronics sales office.
www.
st.
com X0115MUF Characteristics 1 Characteristics Table 1.
Absolute maximum ratings (limiting values) Symbol Parameters IT(RMS) IT(AV) On-state RMS current (180° conduction angle) Average on-state current (180° conduction angle) ITSM Non repetitive surge peak on-state current (Tj initial = 25 °C) I2t I2t value for fusing Critical rate of rise of on-state current dl/dt IG = 2 x IGT , tr ≤ 100 ns VDRM / VRRM Repetitive peak off-state voltage VDSM / VRSM Non repetitive surge peak off-state voltage IGM PG(AV) Peak forward gate current Average gate power dissipation Tstg Storage junction temperature range Tj Operating junction t...


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